Fujifilm Corp. (Tokyo) announced that it has developed a PFAS-free negative-type ArF immersion resist for use in advanced semiconductor manufacturing processes. The new PFAS-free ArF immersion resist is a photoresist (Material used to coat wafer substrate when circuit patterns are drawn in the process of semiconductor manufacturing) designed for negative-type ArF immersion exposure (An exposure method using argon fluoride excimer laser light (wavelength 193 nm), which is currently the most widely used advanced lithography technology). In collaboration with imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, Fujifilm evaluated the performance of this resist and successfully demonstrated its ability to achieve high yields in forming 28nm generation metal wiring, widely used in applications such as automotive and industrial semiconductors. Moving forward, Fujifilm aims to proceed with customer evaluations and target early commercialization.
PFAS is commonly used in the photoresists for ArF immersion exposure, which are widely adopted today, to efficiently generate the acid reactions necessary for drawing fine circuit patterns and to provide a hydrophobic surface on the resist to suppress defects caused by watermarks. However, increasing awareness of the potential environmental and ecological risks associated with PFAS has led to growing regulatory pressure and a rising demand for alternative materials that do not rely on these substances.
Fujifilm has a history of proactively worked on the reduction and replacement of substances that pose potential risks to human health and the environment. For example, Fujifilm developed the NTI developer solution, which uses highly safe, high-purity organic solvents, marking the world’s first innovation in the negative development process. Additionally, Fujifilm launched a PFAS-free nanoimprint resist last year as a semiconductor material compatible with the advanced semiconductor manufacturing technology known as “nanoimprint lithography.” By leveraging the technology and expertise for the development of other advanced resists, including those for EUV, Fujifilm is actively promoting the PFAS-free innovation of advanced resists.
This latest PFAS-free ArF immersion resist was developed by leveraging Fujifilm’s extensive expertise as a pioneer in the negative development process using high-purity organic solvents.
Utilizing the functional molecular design technology honed through its research and development in silver halide photography, along with the molecular design, organic synthesis, formulation, and analytical technologies cultivated through the development of semiconductor materials such as photoresists, it has achieved excellent reaction efficiency in circuit pattern formation and high hydrophobicity to reduce watermarks during advanced ArF immersion exposure. This ensures the formation of highly uniform, fine circuit patterns. Together with imec, Fujifilm evaluated the performance of this PFAS-free negative-type ArF immersion resist and successfully demonstrated its ability to form fine 28nm-generation metal wiring with high yield and high throughput*8. Currently, evaluations are underway with customers.
Fujifilm is a global supplier of photoresists, photolithography-related materials, CMP slurries, post-CMP cleaners, thin-film chemicals, polyimides, high-purity process chemicals, and other process materials for semiconductor manufacturing from front-end to back-end processes. Fujifilm is also expanding globally with products such as WAVE CONTROL MOSAIC, which includes color filter materials for image sensors. The company recently announced investments in semiconductor materials production in Belgium, India and Japan.